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GaAs MMIC
CGY92
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Datasheet
*Power amplifier for GSM or AMPS application *Fully integrated 2 stage amplifier *Operating voltage range: 2.7 to 6 V *Overall power added efficiency 45 % *Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package 1)
CGY 92
CGY 92
Q68000-A8884
MW 12
Maximum ratings Characteristics Positive supply voltage Negative supply voltage Supply current Channel temperature Storage temperature RF input power Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
Symbol VD VG
max. Value 9 -6 2 150 -55...+150 25 9 5
Unit V V A C C dBm W W
ID TCh Tstg Pin PPulse Ptot
Total power dissipation (CW, Ts 81C)
Ts: Temperature at soldering point
Thermal Resistance Channel-soldering point
RthChS
14
K/W
1) Plastic body identical to SOT 223, dimensions see page 14
Siemens Aktiengesellschaft HL EH PD 21
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GaAs MMIC
CGY92
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Functional block diagramm:
Control circuit:
VG (1) VD1 (7) VD2 (12)
VTR (2)
Control Circuit
Pin (8) Pout (12)
The drain current ID of the CGY 92 is adjusted by the internal control circuit. Therefore a negativ voltage (-4V...-6V) has to be supplied at VG. For transmit operation VTR must be set to 0V. During receive operation VTR should be disconnected (shut off mode).
GND1 (6, 9)
GND2 (3, 4, 5, 10)
GND3 (11)
Pin # 1 2 3,4,5,10 6,9 7 8 11 12 VG VTR GND 2 GND 1 VD1 RFin GND 3 VD2, RFout
Configuration Negative voltage at control circuit (-4V...-6V) Control voltage for transmit mode (0V) or receive mode (open) RF and DC ground of the 2nd stage RF and DC ground of the 1st stage Positive drain voltage of the 1st stage RF input power Ground for internal output matching Positive drain voltage of the 2nd stage, RF output power
DC characteristics Characteristics
Drain current
Symbol Conditions
VD=3V, VG=0V, VTR n.c.
min
0.6 2.4
typ
0.9 3.5 1.0 0.32 1.3 -2.8
max
1.2 4.8 -1.8
Unit
A A A S S V
stage 1 IDSS1 stage 2 IDSS2
Drain current with active current control Transconductance (stage 1 and 2) Pinch off voltage
ID gfs1 gfs2 Vp
VD=3V, VG=-4V, VTR=0V VD=3V, ID=350mA VD=3V, ID=700mA VD=3V, ID<500A (all stages)
0.28 1.1 -3.8
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GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Electrical characteristics (TA = 25C , f=0.9 GHz, ZS=ZL=50 Ohm, VD=3.0V, VG=-4V, VTR pin connected to ground, unless otherwise specified, pulsed with a duty cycle of 10%, ton=0.33ms) Characteristics Supply current
Pin=10dBm
Symbol IDD
min 27.0 21.0 31.0 32.3 34.0 43 41 40 -
typ 1.05 2 400 10 29.0 21.8 31.8 33.1 35.0 48 46 45 -46 -37 -48 -38 1.7 : 1 40
max 2.0 : 1 -
Unit A mA A A dB dB dBm dBm dBm % % % dBc dBc dBc dBc dBm
Negative supply current
(normal operation)
IG ID IG G G Po Po Po
-
Shut-off current
VTR n.c.
Negative supply current
(shut off mode, VTR pin n.c.)
Small signal gain
Pin = -5dBm
Power gain
VD=3V; Pin=10dBm
Output Power
VD=3V; Pin=10dBm
Output Power
VD=3.6V; Pin=10dBm
Output Power
VD=5V; Pin=10dBm
Overall Power added Efficiency
VD=3V; Pin=10dBm
Overall Power added Efficiency
VD=3.6V; Pin=10dBm
Overall Power added Efficiency
VD=5V; Pin =10dBm
Harmonics (Pin=10dBm)
VD=3V; VD=5V; (Pout=32dBm) (Pout=35dBm)
Harmonics (Pin=10dBm) Input VSWR VD=3.0V; Third order intercept point
2f0 3f0 2f0 3f0
VD=3V; pulsed with a duty cycle of 10%; f1=900.00MHz; f2=900.20MHz;
IP3 IP3
Third order intercept point
VD=4.8V; pulsed with a duty cycle of 10%; f1=900.00MHz; f2=900.20MHz;
-
45
-
dBm
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GaAs MMIC
CGY92
_____________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 1, VD=3V
1,2 High current Low current 0,8 ID [A] Medium current 1
0,6
0,4
0,2
0 -5 -4,5 -4 -3,5 -3 -2,5 VG [V] -2 -1,5 -1 -0,5 0
DC-Output characteristics - typical values of stage 1
0,8
VG=-0.25 V
0,7
-0.50 V
0,6
Ptot=1.25 W
-0.75 V
0,5 ID [A]
-1.00 V -1.25 V -1.50 V -1.75 V
0,4
0,3
0,2
-2.00 V
0,1
-2.25 V
0 0 0,5 1 1,5 2 2,5 3 VD [V] 3,5 4 4,5 5 5,5 6
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GaAs MMIC
CGY92
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DC-ID(VG) characteristics - typical values of stage 2, VD=3V
4,5 High current Medium current Low current 3,5 3 2,5 2 1,5 1 0,5 0 -5 -4,5 -4 -3,5 -3 -2,5 VG [V] -2 -1,5 -1 -0,5 0 ID [A] 4
DC-Output characteristics - typical values of stage 2
3
VG=-0.50 V
2,5
-0.75 V
2
Ptot=3.75 W
-1.00 V -1.25 V -1.50 V
ID [A]
1,5
1
-1.75 V -2.00 V
0,5
-2.25 V -2.50 V
0 0,5 1 1,5 2 2,5 3 VD [V] 3,5 4 4,5 5 5,5 6
0
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GaAs MMIC
CGY92
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Pout and PAE vs. Pin
(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms )
45
60
40
Pout [dBm]
35
30
25
20
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50
40
30
20
10
15 -5 0 5 10 15
0
Pin [dBm]
Pout and PAE vs. Pin
(VD=5V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms )
45
60
40
Pout [dBm]
35
30
25
20
AAAA AAA AAA AAAAAAAAAAAAAAA A AAAA A A A A A AAAA AAAAA AAA AAA AAAA AAA AAA AAAA AAAA AAAA AAA AAA AAA AAAA AAAA AAAA AAA AAAA AAAA AAAA AAA AAAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAAAA A AAAA AAA AAAA AAA AAAA AAAA AAA AAA AAAA AAA AAAA AAAA AAAA AAA AAAA Pout [dBm] AAAA AAAA AAAA AAA AAAA AAAA AAAAAAAAAPAE [%] AAAA AAAA AAA AAA AAA AAAA AAAA AAAA AAA AAA AAAA AAAA AAA AAA AAAA AAAAAA A AAA AAA AAAA AAA A AAAA AAAA AAAAAAA A AAAA AAAA AAAAAA
50
40
30
20
10
15 -5 0 5 10 15
0
Pin [dBm]
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PAE [%]
PAE [%]
GaAs MMIC
CGY92
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Output power at different temperatures
(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)
33 32 31 30 29 Pout [dBm] 28 27 26 25 24 23 22 21 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 T=-20C T=+20C T=+70C
Pin [dBm]
Power added efficiency at different temperatures
(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)
50 45 40 35 PAE [%] 30 25 20 15 10 5 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
T=-20C T=+20C T=+70C
Pin [dBm]
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GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Measured S-parameter at VD=3V and Pin=9dBm
(VG=-4V, VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
30 25 20 15 Mag [dB] 10 5 0 -5 -10 -15 -20 750 760 770 780 790 800 810 820 830 840 850 860 870 880 890 900 910 920 930 940 950 MAG(s11) MAG(s21)
f [MHz]
Measured S-parameter at VD=5V and Pin=9dBm
(VG=-4V, VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
30 25 20 15 Mag [dB] 10 5 0 -5 -10 -15 -20 750 760 770 780 790 800 810 820 830 840 850 860 870 880 890 900 910 920 930 940 950 MAG(s11) MAG(s21)
f [MHz]
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GaAs MMIC
CGY92
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Output power vs. drain voltage
(Pin=10dBm, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)
38 37 36 35 34 33 32 31 30 29 28 3,0 3,5 4,0 4,5
VD [V]
Pout [dBm]
5,0
5,5
6,0
Performance of internal bias control circuit @VD=3V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
4,0 3,5 3,0 ID [A] 2,5 2,0 1,5 1,0 0,5 0,0 1,0 1,5 2,0 2,5 3,0 3,5 -VG [V] 4,0 4,5 5,0 5,5 6,0 High current Medium current Low current
Performance of internal bias control circuit @VD=5V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
3,5 3,0 2,5 ID [A] 2,0 1,5 1,0 0,5 0,0 1,0 1,5 2,0 2,5 3,0 3,5 -VG [V] 4,0 4,5 5,0 5,5 6,0 High current Medium current Low current
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GaAs MMIC
Total Power Dissipation Ptot=f(TS)
CGY92
_____________________________________________________________________________________________________
Permissible pulse load Ptot_max/Ptot_DC = f(t_p)
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GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Test circuit board:
Note: By changing the position of the 6.8 pF capacitor at pin # 12 it is possible to tune the board for max. Pout or max. PAE. To achieve the maximum output power place the capacitor close to the CGY92. For a better PAE increase the distance between the capacitor and the CGY92 device (2-5mm).
43nH
size: 30 x 26 mm
Principal circuit: VG
1nF
+VD
1nF 4.7uF
43nH
VG (1) VD1 (7) VD2 (12)
VTR (2)
VTR
1nF
Control Circuit
IN
Pin (8)
Pout (12)
OUT
6.8pF
GND1 (6, 9)
GND2 (3, 4, 5, 10)
GND3 (11)
2) Coilcraft SMD Spring Inductor distribution by Ginsbury Electronic GmbH, Am Moosfeld 85 D-81829 Munchen, Tel. 089/45170-223
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GaAs MMIC
Emissions due to GMSK modulation:
CGY92
_____________________________________________________________________________________________________
Measurement was done with the following equipment:
negative supply voltage
-4V
Pulsed Power Supply
Trigger
VD=3V pulsed with a duty cycle of 10% ton=0.33ms VG
gate delay 150us gate length 75us
GSM Signal Generator
ROHDE&SCHWARZ SME03
VD
Pin=8dBm
IN
CGY92
VTR
OUT
Spectrum Analyzer
HP 8561E
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GaAs MMIC
CGY92
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APPLICATION - HINTS
1. CW - capability of the CGY92 Proving the possibility of CW - operation there must be known the total power dissipation of the device. This value can be found as a function of the temperature in the datasheet (page 10). The CGY92 has a maximum total power dissipation of Ptot = 5 W. As an example we take the operating point with a drain voltage VD = 3 V and a typical drain current of ID=1.0 A. So the maximum DC - power can be calculated to:
PDC = VD I D = 3W
This value is smaller than 5 W and CW - operation is possible. By decoupling RF power out of the CGY92 the power dissipation of the device can be further reduced. Assuming a power added efficiency (PAE) of 40 % the total power dissipation Ptot can be calculated using the following formula:
Ptot = PDC (1- PAE ) = 3W (1- 0.40) = 1.8W
2. Operation without using the internal current control If you don' t want to use the internal current control, it is recommended to connect the negative supply voltage at pin 1 (VTR) instead of pin 2 (VG). In that case VG is not connected.
3. Biasing and use considerations Biasing should be timed such that gate voltage (VG) is always applied before the drain voltage (VD), and when returning to the standby mode, gate voltage should only be removed once the drain voltage have been removed.
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GaAs MMIC
CGY92
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Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen (c) Siemens AG 1995. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives world-wide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.
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